IMPROVED METHOD FOR GAIN INDEX MEASUREMENTS OF SEMICONDUCTOR-LASERS/

Authors
BOSSERT DJ GALLANT D
Citation
Dj. Bossert et D. Gallant, IMPROVED METHOD FOR GAIN INDEX MEASUREMENTS OF SEMICONDUCTOR-LASERS/, Electronics Letters, 32(4), 1996, pp. 338-339
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
338 - 339
Database
ISI
SICI code
0013-5194(1996)32:4<338:IMFGIM>2.0.ZU;2-K
Abstract
An improved experimental method for measuring gain and refractive inde x in semiconductor lasers from below-threshold amplified spontaneous e mission spectra is presented. Broad-area, as opposed to narrow-stripe width, diode lasers and a far-field spatial filtering technique are em ployed to eliminate uncertainties associated with lateral waveguiding and carrier confinement.