ZNSE-FACET-PASSIVATED INGAAS INGAASP/INGAP DIODE-LASERS OF HIGH CW POWER AND WALLPLUG EFFICIENCY/

Authors
SYRBU AV YAKOVLEV VP SURUCEANU GI MEREUTZA AZ MAWST LJ BHATTACHARYA A NESNIDAL M LOPEZ J BOTEZ D
Citation
Av. Syrbu et al., ZNSE-FACET-PASSIVATED INGAAS INGAASP/INGAP DIODE-LASERS OF HIGH CW POWER AND WALLPLUG EFFICIENCY/, Electronics Letters, 32(4), 1996, pp. 352-354
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
352 - 354
Database
ISI
SICI code
0013-5194(1996)32:4<352:ZIIDOH>2.0.ZU;2-U
Abstract
A 2.85W CW output, front-facet-emitted power and 54% maximum CW power conversion efficiency have been obtained from aluminum-free, InGaAs/In GaAsP/InGaP optimised-facet-coated, wide-stripe (100 mu m) diode laser s emitting at 950nm. Half-wave ZnSe layers, deposited on the laser fac ets prior to applying low/high reflectivity (LR/HR) dielectric coating s, increase the maximum CW optical power by 50%. The power conversion efficiency decreases by only 25% of its maximum value as the CW power increases from 0.75 to 2.85W.