SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH 36.1 CUTOFF FREQUENCY/

Authors
KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF W EASTMAN LF
Citation
Ma. Khan et al., SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH 36.1 CUTOFF FREQUENCY/, Electronics Letters, 32(4), 1996, pp. 357-358
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
357 - 358
Database
ISI
SICI code
0013-5194(1996)32:4<357:SGADCH>2.0.ZU;2-L
Abstract
The authors report on the improved microwave performance of short AlGa N/GaN doped channel heterostructure field effect transistors. These tr ansistors with 0.25 mu m gates have a cutoff frequency f(T) up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation frequency f(max) similar or equal to 70.8 GHz. This value of f(T) is the highest value reported for any wide-bandgap semiconductor device.