10GBIT S LONG-WAVELENGTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER GROWN ON GAAS/

Authors
HURM V BENZ W BERROTH M BRONNER W FINK T HAUPT M KOHLER K LUDWIG M RAYNOR B ROSENZWEIG J
Citation
V. Hurm et al., 10GBIT S LONG-WAVELENGTH MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER GROWN ON GAAS/, Electronics Letters, 32(4), 1996, pp. 391-392
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
391 - 392
Database
ISI
SICI code
0013-5194(1996)32:4<391:1SLMIO>2.0.ZU;2-F
Abstract
The first 10 Gbit/s long-wavelength monolithic integrated photoreceive r grown on GaAs substrate has been fabricated using a 0.3 mu m gate le ngth AlGaAs/GaAs HEMT process. At a wavelength of 1.3 mu m the integra ted InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photo receiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER = 10(-9)).