COLLECTOR-UP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING OXIDIZED ALAS FOR CURRENT CONFINEMENT/

Authors
MASSENGALE A LARSON MC DAI C HARRIS JS
Citation
A. Massengale et al., COLLECTOR-UP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING OXIDIZED ALAS FOR CURRENT CONFINEMENT/, Electronics Letters, 32(4), 1996, pp. 399-401
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
399 - 401
Database
ISI
SICI code
0013-5194(1996)32:4<399:CAGHBU>2.0.ZU;2-M
Abstract
The authors describe a novel method for fabricating collector-up AlGaA s/GaAs heterojunction bipolar transistors. An AlAs layer is inserted i nto the emitter layer and is oxidised in water vapour at 450 degrees C . The resulting AlAs-oxide serves as a current confining layer that co nstricts collector current flow to the intrinsic portion of the device . DC devices with typical current gains of 50 are observed.