EXTRACTION OF CHANNEL-LENGTH IN 0.1 MU-M NMOSFET BY GATE TO DRAIN CAPACITANCE

Authors
LING CH ANG DS DUTOIT M
Citation
Ch. Ling et al., EXTRACTION OF CHANNEL-LENGTH IN 0.1 MU-M NMOSFET BY GATE TO DRAIN CAPACITANCE, Electronics Letters, 32(4), 1996, pp. 402-404
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
402 - 404
Database
ISI
SICI code
0013-5194(1996)32:4<402:EOCI0M>2.0.ZU;2-A
Abstract
Applying a 100 kHz, 25 mV signal to the drain of a MOSFET, and measuri ng the resultant current at the gate, a gale to drain capacitance is o btained, from which the effective channel length can be extracted. Thi s technique has been successtully applied to a 0.1 x 2 mu m(2) device.