MODIFIED CHARGE-CONTROL EQUATION FOR SIMULATION OF DIODE REVERSE RECOVERY

The mathematical diode model currently used in most circuit simulation s is not able to fully account for the reverse recovery characteristic s. This is caused by the quasistatic diffusion charge equation used in the model. A proposed modification to the charge equation is presente d. The modification has been test-implemented in PSPICE and Saber, two of the most widely used circuit simulators in the industry. It has be en verified experimentally that the new model is able to describe the diode reverse recovery behaviour more realistically without degrading the convergence properties of the simulators.