SELECTIVELY GROWN VERTICAL SI-P MOS-TRANSISTOR WITH SHORT-CHANNEL LENGTHS

Vertical p-MOS transistors with channel lengths of similar to 130nm ha ve been fabricated using selective LPCVD epitaxy for the definition of the channel region, instead of fine line lithography. Owing to self-a ligned facet growth the channel region and the volume diode which limi ted the parasitic bipolar transistor can be designed more independentl y. Thus a short-channel p-MOS transistor with a high breakthrough volt age, an ideal subthreshold behaviour and a high transconductance was f abricated.