SELF-ALIGNED COMPLEMENTARY GAAS MISFETS USING A LOW-TEMPERATURE-GROWNGAAS GATE INSULATOR

GaAs complementary metal insulator semiconductor field effect transist ors (MISFETs) with a low temperature grown GaAs gate insulator were fa bricated using the same epitaxial layer structure. Self-aligned Si and Be implants were used for the source/drain region in n- and p-channel MISFETs, respectively. With a 1.5 mu m gate length, the maximum drain current is 40 and 120 mA/mm for a normally-off n- and p-channel MISFE T, respectively. It increases to 500 mA/mm for a normally-on n-channel device.