SI PD OHMIC CONTACT TO N-GAP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE/

Authors
WANG LC PARK MH JORGE HA TAN IH KISH F
Citation
Lc. Wang et al., SI PD OHMIC CONTACT TO N-GAP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE/, Electronics Letters, 32(4), 1996, pp. 409-410
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
409 - 410
Database
ISI
SICI code
0013-5194(1996)32:4<409:SPOCTN>2.0.ZU;2-Y
Abstract
A Si/Pd ohmic scheme (contact resistivity similar to 2 x 10(4) Omega-c m(2)) annealed between 400 and 650 degrees C has been developed for n- GaP (n similar to 5 x 10(17) cm(-3))). The ohmic contact formation mec hanism can be rationalised in terms of the solid phase regrowth (SPR) principle and the solid phase epitaxy of Si on n-GaP.