EFFECT OF ZN DOPING ON T(C) OF Y1-XPRXBA2CU3-YZNYOZ AND ITS DEPENDENCE ON PR DOPING

Authors
ZHAO YG JIA SL ZHOU YQ YANG Y ZHAO ZX
Citation
Yg. Zhao et al., EFFECT OF ZN DOPING ON T(C) OF Y1-XPRXBA2CU3-YZNYOZ AND ITS DEPENDENCE ON PR DOPING, Physica. C, Superconductivity, 209(4), 1993, pp. 472-476
Citations number
29
Categorie Soggetti
Physics, Applied
Journal title
Physica. C, Superconductivity → ACNP
ISSN journal
09214534
Volume
209
Issue
4
Year of publication
1993
Pages
472 - 476
Database
ISI
SICI code
0921-4534(1993)209:4<472:EOZDOT>2.0.ZU;2-W
Abstract
The effect of Zn doping on T(c) of Y1-xPrxBa2Cu3-yZnyOz (x=0, 0.1, 0.2 , 0.3) was investigated. For the x=0 system, T(c) decreases linearly w ith the Zn real doping amount, which was determined by EDAX. This line ar behaviour also holds for the other three systems with x = 0.1, 0.2, 0.3. These results were qualitatively explained by using the Abrikoso v-Gor'kov pair-breaking theory. The slope of the dT(c)/dy increases wi th Pr doping, which indicated the dependence of the pair-breaking effe ct on carrier density.