LOW-SUPPLY-NOISE LOW-POWER EMBEDDED MODULAR SRAM

Citation
Kj. Schultz et al., LOW-SUPPLY-NOISE LOW-POWER EMBEDDED MODULAR SRAM, IEE proceedings. Circuits, devices and systems, 143(2), 1996, pp. 73-82
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
13502409
Volume
143
Issue
2
Year of publication
1996
Pages
73 - 82
Database
ISI
SICI code
1350-2409(1996)143:2<73:LLEMS>2.0.ZU;2-P
Abstract
A low-noise, low-power embedded modular SRAM is described. A 512 x 15 configuration at 3.3V generates a maximum of 8.2mA/ns dI/dt and consum es 0.24mW/MHz, the lowest power dissipation ever reported for a modula r embedded memory. Results are achieved using a pulsed divided word li ne architecture, with internal cascaded clocks, weak static sensing, l ow-noise buffers and flip-flops and low-noise low-power decoding techn iques, Alternatives in the core cell, sense amplifier and read/write a rchitecture designs are discussed. Circuit details, as well as experim ental and simulation results, are presented.