OBSERVATION OF INVERSION-LAYERS AT GA(2)O(3)-GAAS INTERFACES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY

Authors
PASSLACK M HONG M MANNAERTS JP
Citation
M. Passlack et al., OBSERVATION OF INVERSION-LAYERS AT GA(2)O(3)-GAAS INTERFACES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Electronics Letters, 32(3), 1996, pp. 267-269
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
3
Year of publication
1996
Pages
267 - 269
Database
ISI
SICI code
0013-5194(1996)32:3<267:OOIAGI>2.0.ZU;2-V
Abstract
Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide mms were deposited on clean, atomically ordered (100) GaAs surfaces at sim ilar to 600 degrees C by electron beam evaporation using a Gd3Ga5O12 s ingle crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance- voltage measurements.