REDUCTION OF PARASITIC BIPOLAR-TRANSISTOR ACTION AND PUNCHTHROUGH SUSCEPTIBILITY IN MOSFETS USING SI SI1-XGEX SOURCES AND DRAINS/

Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipolar action and punchthr ough susceptibility. The authors compare the properties of elevated so urce and drain devices with and without Si1-xGex in the source and dra in regions. We show that the parasitic bipolar gain is reduced by a fa ctor of 18 and that the punchthrough effects seen in silicon devices a re absent in the Si0.8Ge0.2 devices.