175 K CONTINUOUS-WAVE OPERATION OF INASSB INAIASSB QUANTUM-WELL DIODE-LASERS EMITTING AT 3.5 MU-M/

Multiple quantum-well diode lasers incorporating compressively straine d InAS(0.935)Sb(0.065) wells and tensile-strained In0.15Al0.85As0.9Sb0 .1 barriers are reported. These lasers, grown on InAs substrates by mo lecular beam epitaxy, have emission wavelengths between 3.2 and 3.55 m u m. Broad-stripe lasers have exhibited pulsed threshold current densi ty as low as 30 A/cm(2) at 80 K and the characteristic temperatures be tween 30 and 40 K. The maximum pulsed operating temperature is 225 K. Ridge-waveguide lasers have cw threshold current of 12 mA at 100 K, an d the maximum cw operating temperature is 175 K. (C) 1996 American Ins titute of Physics.