SURFACE MODIFICATION OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FOR PRODUCING ADHERENT THICK AND THIN-FILM METALLIZATIONS FOR ELECTRONIC PACKAGING

In order to make chemically vapor deposited diamond (CVDD) substrates amenable to surface metallization without significant reduction in the rmal conductivity, very thin alumina films were grown on diamond by va por deposition of Al in oxygen atmosphere, followed by very low-temper ature annealing in oxygen. A Cr interlayer initially deposited on CVDD prior to alumina deposition was found to lead to excellent adhesion b etween the substrate and the deposit. The alumina films were character ized by scanning and transmission electron microscopy as well as Auger electron spectroscopy. (C) 1996 American Institute of Physics.