OPERATION VOLTAGE REDUCTION IN ZNSE-BASED LIGHT-EMITTING-DIODES DUE TO THE USE OF N-TYPE ALGAAS AND CDZNSE BUFFER REGIONS

On proposing the existence of a significant barrier between n-type GaA s and n-type ZnSe, in ZnSe-based devices, we examined various offset r eduction buffers, in standard light-emitting diode structures, to asse ss their ability to reduce the excess voltages applied across this int erface during operation. The main buffers investigated were CdZnSe and AlGaAs. The AlGaAs buffer was seen to have the largest effect, reduci ng the operation voltage from 17 V (GaAs buffer only sample) to 6.5 V at a current density of 1 A/cm(2). Our results clearly indicate the ut ility of such buffer regions in reducing the operation voltages of the se devices. (C) 1996 American Institute of Physics.