16GHZ BANDWIDTH MSM PHOTODETECTOR AND 45 85GHZ F(T)/F(MAX) HEMT PREPARED ON AN IDENTICAL INGAAS/INP LAYER STRUCTURE/

Authors
HORSTMANN M SCHIMPF K MARSO M FOX A KORDOS P
Citation
M. Horstmann et al., 16GHZ BANDWIDTH MSM PHOTODETECTOR AND 45 85GHZ F(T)/F(MAX) HEMT PREPARED ON AN IDENTICAL INGAAS/INP LAYER STRUCTURE/, Electronics Letters, 32(8), 1996, pp. 763-764
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
8
Year of publication
1996
Pages
763 - 764
Database
ISI
SICI code
0013-5194(1996)32:8<763:1BMPA4>2.0.ZU;2-C
Abstract
An MSM photodetector and a HEMT prepared on an identical InGaAs/InP la ver structure are demonstrated for the first time. A 150nm undoped InG aAs layer is inserted above the 2DEG to enhance the photodetector resp onsivity, and a bandwidth of 16GHz is achieved. On the same wafer. pro cessed HEMTs show optimal high frequency performance with an f(T) of 4 5GHz and an f(max) of 85GHz. This procedure could be suitable for the preparation of monolithically integrated photoreceivers with high perf ormance and low cost.