ION-IMPLANTED 0.4-MU-M WIDE 2-D MESFET FOR LOW-POWER ELECTRONICS

Authors
HURT MJ PEATMAN WCB TSAI R YTTERDAL T SHUR M MOON BJ
Citation
Mj. Hurt et al., ION-IMPLANTED 0.4-MU-M WIDE 2-D MESFET FOR LOW-POWER ELECTRONICS, Electronics Letters, 32(8), 1996, pp. 772-773
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
8
Year of publication
1996
Pages
772 - 773
Database
ISI
SICI code
0013-5194(1996)32:8<772:I0W2MF>2.0.ZU;2-3
Abstract
Two-dimensional (2-D) MESFETs with 0.4 mu m channel widths have been f abricated on ion-implanted n-GaAs material. The 2-D MESFET uses sidewa ll Schottky contacts on either side of an Si-doped channel to laterall y modulate the current. The peak drain current is 370mA/mm and the pea k transconductance is 295mS/mm at room temperature. The narrow channel effect and channel length modulation have been reduced in this device .