SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES

Authors
KOUVATSOS DN TSOUKALAS D SARCONA GT HATALIS MK STOEMENOS J
Citation
Dn. Kouvatsos et al., SINGLE-CRYSTAL SILICON THIN-FILM TRANSISTORS FABRICATED AT LOW PROCESS TEMPERATURES ON GLASS SUBSTRATES, Electronics Letters, 32(8), 1996, pp. 775-777
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
8
Year of publication
1996
Pages
775 - 777
Database
ISI
SICI code
0013-5194(1996)32:8<775:SSTTFA>2.0.ZU;2-Z
Abstract
Thin film transistors were fabricated in single crystal silicon films bonded to glass substrates. High electron mobilities were achieved, ma king, integration of the driving circuitry and pixel switching element s on the same glass substrate possible and allowing improved display a perture ratios. These single crystal silicon TFTS are attractive for A MLCD applications.