InAs0.91Sb0.09 light emitting diodes (LEDs) were grown on p-type GaSb
substrates using liquid phase epitaxy (LPE). These devices exhibit eff
icient infrared emission at 4.2 mu m and can be used to fabricate infr
ared carbon dioxide (CO2) gas sensors for the cost effective detection
and monitoring of CO2 gas in various applications.