ORIENTED GROWTH OF DIAMOND ON THERMALLY CARBURIZED SILICON SUBSTRATES

Oriented growth of diamond on Si(100) substrates has been achieved by performing ''thermal carburization'' of the substrates prior to diamon d growth by the d.c. plasma CVD method. Oriented diamond particles app roximately 10(7) cm(-2) in number density are observed together with r andomly oriented diamond particles. It is confirmed by reflection high energy electron diffraction (RHEED) analysis that these oriented diam ond particles are tilted with respect to the crystallographic axis of the substrate. RHEED and X-ray photoelectron spectroscopy analyses hav e revealed that epitaxial beta-SiC layers with carbon-rich surfaces pl ay an important role in the oriented growth of diamond on Si.