SYNTHESIS AND GROWTH-MECHANISM OF FLATTENED DIAMOND CRYSTALS BY CHEMICAL-VAPOR-DEPOSITION

Citation
K. Hirabayashi et Y. Hirose, SYNTHESIS AND GROWTH-MECHANISM OF FLATTENED DIAMOND CRYSTALS BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 5(1), 1996, pp. 48-52
Citations number
11
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
1
Year of publication
1996
Pages
48 - 52
Database
ISI
SICI code
0925-9635(1996)5:1<48:SAGOFD>2.0.ZU;2-A
Abstract
Flattened diamond crystals were synthesized under high oxygen gas conc entration and low substrate temperature conditions using the oxy-acety lene dame method. The flattened morphology appeared because preferenti al growth occurred along side faces owing to the presence of twin re-e ntrant corners. This ''re-entrant corner effect'' can be expected only under the condition of a low two-dimensional nucleation rate. Therefo re, the flattened diamond crystals are synthesized only under the cond ition of a high oxygen gas concentration because when the oxygen to ca rbon ratio is increased, the two-dimensional nucleation rate is suppre ssed by the decrease in supersaturation of the source gas. Also, the t win re-entrant corners are formed as hexagonal diamond nuclei moving o n the substrate coalesce together.