POLYCRYSTALLINE DIAMOND PRESSURE MICROSENSOR

Diamond deposition processing and silicon photolithographic and etchin g techniques were used to create undoped diamond diaphragms a few mill imetres in diameter and 5-10 microns thick. Delineated and electricall y isolated dopsd diamond resistors nominally 100 microns wide by 500 m icrons long by 4 microns thick, with thick film silver-based interconn ect are fabricated on top of the diaphragm. Zero strain values of the resistors are nominally a few hundred k Omega. Isolation ratio is grea ter than 10(3). As the membrane is flexed by pressure, the Delta R/R p iezoresistance (PZR) of the diamond resistors was measured. Various PZ R configurations and temperature behaviour were examined.