CRYSTALLIZATION AND THERMOELECTRIC-POWER OF TL2TE3 SINGLE-CRYSTALS

Citation
Ga. Gamal et Mm. Nassary, CRYSTALLIZATION AND THERMOELECTRIC-POWER OF TL2TE3 SINGLE-CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 315-321
Citations number
13
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
31
Issue
3
Year of publication
1996
Pages
315 - 321
Database
ISI
SICI code
0232-1300(1996)31:3<315:CATOTS>2.0.ZU;2-5
Abstract
Thermoelectric power (TEP) of Tl2Te3 was measured in the temperature r ange from 150 to 480 K. The crystal was found to have a p-type conduct ivity throughout the whole range of temperature. The effective masses of holes and electrons were determined at room temperature and found t o be m(p) = 1.1 x 10(-34) kg and m(n)* = 1.72 x 10(-35) kg, respectiv ely. Also at the same temperature the mobility mu(p) was found to be 1 737.8 cm(2)/V.s and mu(n) was 3962.2 cm(2)/V.s. The hole and electron diffusion coefficients were obtained as 44.84 cm(2)/s, and 102.23 cm(2 )/s. The relaxation times for holes and electrons were calculated and yielded the values tau(p) = 1.19 x 10(12) s and tau(n) = 4.25 x 10(13) s, respectively.