ELECTRICAL CHARACTERIZATION OF IRRADIATION PLUS ANNEALING-INDUCED VASZNGA PAIRS IN P-TYPE GAAS (ZN) CRYSTALS

Citation
Kd. Glinchuk et Av. Prokhorovich, ELECTRICAL CHARACTERIZATION OF IRRADIATION PLUS ANNEALING-INDUCED VASZNGA PAIRS IN P-TYPE GAAS (ZN) CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 335-342
Citations number
14
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
31
Issue
3
Year of publication
1996
Pages
335 - 342
Database
ISI
SICI code
0232-1300(1996)31:3<335:ECOIPA>2.0.ZU;2-Z
Abstract
Effect of fast electron irradiation (E = 2.2 Mev, Phi(e) = 1 x 10(16) el/cm(2)) and subsequent annealings (T = 150 to 350 degrees C, t = 10 to 600 min) of zinc-doped p-type GaAs crystals on the formation and di ssociation of VAsZnGa pairs is studied. An analysis of the formation a nd dissociation kinetics of VAsZnGa, pairs permitted to find the diffu sion coefficient of radiation-induced arsenic vacancies D(D = 1.5 x 10 (-18), 1 X 10(-17) and 5 x 10(-17) cm(2)/s at 150, 175 and 200 degrees C accordingly), their migration energy epsilon(m)(epsilon(m) = 1.1 eV ), the binding energy of VAsZnGa pairs epsilon(b)(epsilon(b) = 0.5 eV) , and also their dissociation energy epsilon(d)(epsilon(d) = 1.6 eV).