Kd. Glinchuk et Av. Prokhorovich, ELECTRICAL CHARACTERIZATION OF IRRADIATION PLUS ANNEALING-INDUCED VASZNGA PAIRS IN P-TYPE GAAS (ZN) CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 335-342
Effect of fast electron irradiation (E = 2.2 Mev, Phi(e) = 1 x 10(16)
el/cm(2)) and subsequent annealings (T = 150 to 350 degrees C, t = 10
to 600 min) of zinc-doped p-type GaAs crystals on the formation and di
ssociation of VAsZnGa pairs is studied. An analysis of the formation a
nd dissociation kinetics of VAsZnGa, pairs permitted to find the diffu
sion coefficient of radiation-induced arsenic vacancies D(D = 1.5 x 10
(-18), 1 X 10(-17) and 5 x 10(-17) cm(2)/s at 150, 175 and 200 degrees
C accordingly), their migration energy epsilon(m)(epsilon(m) = 1.1 eV
), the binding energy of VAsZnGa pairs epsilon(b)(epsilon(b) = 0.5 eV)
, and also their dissociation energy epsilon(d)(epsilon(d) = 1.6 eV).