PHYSICAL-PROPERTIES OF GA2SE SINGLE-CRYSTALS

Citation
Ga. Gamal et al., PHYSICAL-PROPERTIES OF GA2SE SINGLE-CRYSTALS, Crystal research and technology, 31(3), 1996, pp. 359-364
Citations number
7
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
31
Issue
3
Year of publication
1996
Pages
359 - 364
Database
ISI
SICI code
0232-1300(1996)31:3<359:POGS>2.0.ZU;2-B
Abstract
Measurements of the electrical conductivity, Hall effect, thermoelectr ic power were carried out in a wide temperature range (from about 170 to 475 K) for Ga2Se compound grown in single crystalline form. The pre sent investigation revealed unusual observations in the Hall effect an d the scattering mechanisms of the charge carriers indicating that Ga2 Se is not a simple semiconductor. Also it showed that Ga2Se has a rela tively high value of the thermoelectric power. A lot of physical param eters were deduced in the present study.