GETTERING PROPERTIES OF PRASEODYMIUM IN GAAS, IN0.53GA0.47AS, AND INPGROWN BY LIQUID-PHASE EPITAXY

The incorporation of praseodymium (Pr) into GaAs, In0.53Ga0.47As, and InP during liquid-phase epitaxy were investigated by double crystal x- ray; diffraction, Hall effect, low temperature photoluminescence (PL) measurements. The lattice mismatch slightly vary with Pr concentration in the growth melts. Examinations of the electrical property illustra te that the lower carriers concentrations and a higher mobilities are obtain from Pr-doped epilayers than undoped sample (In0.53Ga0.47As and InP). The PL spectra (15-K) show that the intensity of the impurity r elated peaks decreases and the near-band-to-band luminescence intensit y increase. They also reveal that the impurities are gettered by Pr io ns during LPE growth. Thus, for the purpose of purification, proper am ount of Pr in the growth melts is suggested. No intra-4f-shell transit ion line is observed from the Pr-doped GaAs, In0.53Ga0.47As, and InP l ayers.