THE EFFECT OF ION-IMPLANTATION ON LUMINESCENCE OF A SILICA

Luminescence spectra and intensities oi type I io type IV silicas. exc ited with a 1 keV electron beam, were measured, Luminescence was measu red on type III silica samples implanted with hydrogen or helium ions in a dose range of 10(16)-10(17)/cm(2) with energies in the range of 3 5-160 keV. Under electron excitation, luminescence bands were observed at 2.75 eV in all samples and bands at 19 and 2.2 eV in some samples. The initial luminescent intensities at 2.75 eV were proportional io t he beam current in the range of 0.8-12.7 mu A/mm(2) and inversely rela ted to the SiOH contents in some silicas and H+ implanted silicas. A m odel is proposed that the transient change of the emission intensities is due to a competition reaction between luminescence center creation and a reaction that diminishes the intensities.