PRECIPITATION OF CU AND NI ON FRANK-TYPE PARTIAL DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON

Precipitation behaviors of Cu and Ni on Frank-type partial dislocation s in Czochralski-grown silicon are investigated. It is found that Cu d evelops precipitate colonies in the region away from Frank partials an d does not decorate Frank partials when the specimens are cooled slowl y. while Ni decorates them although the concentration of Ni is lower t han that of Cu in the specimens. The results indicate chat Ni impurity is easier to decorate Frank partials than Cu impurity in Si.