REACTIVE SPUTTER-DEPOSITION OF CARBON NITRIDE FILMS BY USING HOLLOW-CATHODE DISCHARGE

Authors
ZHAO J KANG N XU JR
Citation
J. Zhao et al., REACTIVE SPUTTER-DEPOSITION OF CARBON NITRIDE FILMS BY USING HOLLOW-CATHODE DISCHARGE, Chinese Physics Letters, 13(4), 1996, pp. 305-308
Citations number
13
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
4
Year of publication
1996
Pages
305 - 308
Database
ISI
SICI code
0256-307X(1996)13:4<305:RSOCNF>2.0.ZU;2-V
Abstract
Carbon nitride films have been prepared by reactive sputtering using h ollow cathode discharge. Auger spectra show that the nitrogen content is about 20-25 at.% in the hulk. Infrared (IR) spectra display three b road absorption bands. Alter heating treatment changes of IR spectra s uggest that the nitrogen incorporating in the bonding network of amorp hous is thermally stable and hydrogen content decreases.