TEMPERATURE BEHAVIOR OF IMPLANTED AND PULSED-LASER IRRADIATED GAAS

Recent studies have shown that the Low-Power Pulsed-Laser Annealing (L PPLA) of ion-implanted GaAs specimens can be realized in a power-densi ty window in which a complete structural reordering is guaranted. As t he experimentally employed conditions allow us to describe the theoret ical problem in an unidimensional space domain, we describe here a met hod to investigate the in-depth temperature behavior during the low-po wer pulsed-laser irradiation of ion-implanted semiconductors. The appl ication of this method to GaAs specimens shows that the upper limit of the energy density window is connected with the exceeding of the crit ical temperature T(c) below which the As evaporation rate is negligibl e.