USE OF LANGMUIR PROBES FOR MONITORING OF PRECURSOR CONCENTRATIONS DURING PLASMA ACTIVATED CHEMICAL-VAPOR DEPOSITION OF HARD COATINGS

Authors
Citation
P. Spatenka et H. Suhr, USE OF LANGMUIR PROBES FOR MONITORING OF PRECURSOR CONCENTRATIONS DURING PLASMA ACTIVATED CHEMICAL-VAPOR DEPOSITION OF HARD COATINGS, Applied physics. A, Solids and surfaces, 56(5), 1993, pp. 443-444
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
07217250
Volume
56
Issue
5
Year of publication
1993
Pages
443 - 444
Database
ISI
SICI code
0721-7250(1993)56:5<443:UOLPFM>2.0.ZU;2-1
Abstract
Langmuir-probe characteristics were measured during the deposition of hard zirconium nitride films in H-2 plasmas with tetrakis(diethylamido )-zirconium -Zr[N(C2H5)2]4- as a precursor. A combination of fast repe atable probe sweeps and hysteresis measurements indicated undisturbed characteristics for approximately 1 h. Since the electron concentratio n is highly dependent on the partial pressure of the precursor it is p ossible to use probes as sensors to monitor precursor concentration in a discharge.