NUMERICAL-SIMULATION OF SILICON-CARBIDE CHEMICAL-VAPOR-DEPOSITION

Authors
DEJONG F MEYYAPPAN M
Citation
F. Dejong et M. Meyyappan, NUMERICAL-SIMULATION OF SILICON-CARBIDE CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 5(2), 1996, pp. 141-150
Citations number
24
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
5
Issue
2
Year of publication
1996
Pages
141 - 150
Database
ISI
SICI code
0925-9635(1996)5:2<141:NOSC>2.0.ZU;2-#
Abstract
Chemical vapor deposition of silicon carbide from methyltrichlorosilan e in hydrogen carrier gas is modeled. The governing fluid flow, energy , and species conservation equations are solved numerically in two dim ensions. A kinetic model consisting of fourteen chlorosilane and hydro carbon reactions is used. Results are presented in terms of flow patte rns, species distributions, and growth parameters for various reactor pressures.