FORMATION OF SP(3)-BONDED CARBON UPON HYDROTHERMAL TREATMENT OF SIC

Authors
GOGOTSI YG KOFSTAD P YOSHIMURA M NICKEL KG
Citation
Yg. Gogotsi et al., FORMATION OF SP(3)-BONDED CARBON UPON HYDROTHERMAL TREATMENT OF SIC, DIAMOND AND RELATED MATERIALS, 5(2), 1996, pp. 151-162
Citations number
52
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
5
Issue
2
Year of publication
1996
Pages
151 - 162
Database
ISI
SICI code
0925-9635(1996)5:2<151:FOSCUH>2.0.ZU;2-Y
Abstract
The composition and structure of carbon produced by selective leaching of silicon carbide under hydrothermal conditions in the temperature r ange 300-800 degrees C and at pressures < 500 MPa were examined by Ram an and IR spectroscopy, XRD, SEM, TEM and EDS. The results of this stu dy have demonstrated that various carbon allotropes, including diamond , are formed during hydrothermal treatment of SiC. Their structure var ies depending on the experimental conditions and SiC precursor. The fo rmation of sp(2) vs. sp(3) carbon is discussed.