OXYGEN CONCENTRATION IN THE TOP SILICON LAYER OF SILICON-ON-INSULATORMATERIALS FORMED BY LOW-DOSE IMPLANTATION OF OXYGEN

Authors
SAITO M JABLONSKI J KATAYAMA T MIYAMURA Y IKEGAYA K IMAI M
Citation
M. Saito et al., OXYGEN CONCENTRATION IN THE TOP SILICON LAYER OF SILICON-ON-INSULATORMATERIALS FORMED BY LOW-DOSE IMPLANTATION OF OXYGEN, JPN J A P 2, 35(3B), 1996, pp. 359-361
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
3B
Year of publication
1996
Pages
359 - 361
Database
ISI
SICI code
Abstract
Oxygen concentration in the top silicon layer of silicon-on-insulator materials formed by low-dose implantation of oxygen has been measured by means of secondary ion mass spectroscopy. A value of less than 1 x 10(17) atoms/cm(3) has been obtained. We propose that the oxygen conce ntration in the top silicon layer is controlled by oxygen out-diffusio n during the wafer cooling process.