VAPOR-PHASE EPITAXIAL-GROWTH OF ZNTE FILMS USING METALLIC SOURCES

Undoped ZnTe films with very low resisitivity were grown by vapor phas e epitaxy (VPE) with elemental Zn and Te as source materials. The sour ce vapors were transported separately to the vicinity of the substrate s, kept at 450-560 degrees C, by now through a thin quartz tube. The g rowth rate showed two activation energies (45 kcal/mol and 15 kcal/mol ) according to the growth temperature. The epitaxial growth was confir med by using high energy electorn diffraction (RHEED) measurements. Ha ll effect measurements showed p-type conductivity. Conductive films we re obtained when the flow rates of Zn and Te were almost equal and the substrate temperature was above 500 degrees C.