ANTIMONY COIMPLANTATION TO SUPPRESS BORON-PENETRATION IN P-POLY GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS()

A novel method for suppressing boron-penetration is reported. Antimony co-implantation with BF2 in p-poly gate of metal-oxide-semiconductor (MOS) device is found to effectively alleviate the boron-penetration e nhanced by the existence of fluorine. The boron-penetration in BF2 imp lanted poly-gate is observed to be significantly reduced as the dose o f co-implanted antimony increases. From Fourier transform infrared spe ctroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) analysis, the suppression of boron-penetration is shown to be possibly due to th e formation of Sb-F compound, which reduces the fluorine enhanced boro n diffusion.