SURFACE MODIFICATION OF SILICON(111) BY ANNEALING AT HIGH-TEMPERATUREIN HYDROGEN

Authors
ZHONG L TAKEDA R IZUNOME K MATSUSHITA Y AIBA Y MATSUSHITA J YOSHIKAWA J HAYASHI K SHIRAI H SAITO H
Citation
L. Zhong et al., SURFACE MODIFICATION OF SILICON(111) BY ANNEALING AT HIGH-TEMPERATUREIN HYDROGEN, Applied physics letters, 68(17), 1996, pp. 2349-2351
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
17
Year of publication
1996
Pages
2349 - 2351
Database
ISI
SICI code
0003-6951(1996)68:17<2349:SMOSBA>2.0.ZU;2-5
Abstract
A vicinal silicon (111) surface exhibits well defined single steps aft er being annealed at 1200 degrees C in hydrogen, which is in sharp con trast with step bunches featuring the surface annealed in argon. As a temporary explanation for its ability to unzip the step bunches, we su ggest that hydrogen destroys the faulted triangles of a [11(2) over ba r] step, eliminates this kind of step, and eventually leaves the singl e [<(11)over bar 2>] steps alone behind on the surface. (C) 1996 Ameri can Institute of Physics.