FORMATION OF DEEP THERMAL DONORS IN HEAT-TREATED CZOCHRALSKI SILICON

Formation of new donors in Czochralski silicon (Ct-Si) at temperatures T greater than or equal to 600 degrees C was studied. The contributio n of deep donors was separated from those of other donor families with shallower states and in this way the formation kinetics of deep therm al donors was established. The results obtained make it possible to at tribute these donor states at approximate to E(C)-0.1 eV to approximat e to E(C)-0.25 eV to ribbonlike defects. Variations in the cross secti on of A-center formation under gamma irradiation of heat-treated Ct-Si were found to correlate with formation of deep thermal donors. (C) 19 96 American Institute of Physics.