SIMULATION OF CLUSTER EVAPORATION AND TRANSIENT ENHANCED DIFFUSION INSILICON

The evaporation of {311} self-interstitial clusters has recently been linked to the phenomenon of transient enhanced diffusion in silicon. A theory of cluster evaporation is described, based on first-order kine tic equations. It is shown to give a good account of the data over a r ange of temperatures. The theory simultaneously explains several of th e unexpected features of transient enhanced diffusion, including the a pparently steady level of the enhancement during its duration, and the dependence of the duration on implant energy and dose. The binding en ergy used to match the theory to data is in good agreement with molecu lar dynamics calculations of cluster stability in silicon. (C) 1996 Am erican Institute of Physics.