ROOM-TEMPERATURE, SHORT-WAVELENGTH (400-500 NM) PHOTOLUMINESCENCE FROM SILICON-IMPLANTED SILICON DIOXIDE FILMS

Experiments are reported which explore the possibility of using low-te mperature, multiple-energy Si+ ion implantation into thin SiO2 films o n Si and subsequent short-time thermal processing to form silicon nano structures capable of yielding a high-intensity emission in the short- wavelength part of the visible spectrum. A room-temperature short-wave length PL band of high intensity was found after double implantation w ith energies of 200 and 100 keV at a temperature of -20 degrees C to a total dose of 4.8x10(16) cm(-2) (atomic concentration about 2x10(21) cm(-3)) and subsequent furnace annealing at 400 degrees C for 0.5 h in forming gas or by flash lamp annealing at 1050 degrees C for 20 ms. ( C) 1996 American Institute of Physics.