EFFECTS OF INTERFACIAL CHEMISTRY ON THE FORMATION OF INTERFACIAL LAYERS AND FAULTED DEFECTS IN ZNSE GAAS/

Existence of Zn-As and Ga-Se interfacial layers were suggested by tran smission electron microscopy in Zn treated and Se treated or reacted Z nSe/GaAs interfaces, respectively. High densities of As precipitates a nd Shockley partials were introduced in films with Zn treatment on a c (4x4) As-rich GaAs surface. In addition, high densities of vacancies a nd Shockley partials were obtained in samples with a Se-reacted ZnSe/G aAs interface. Formation of the Shockley partials may originate from t he stacking errors induced by disordering of Zn- or Ga-interstitials o n the GaAs surface. (C) 1996 American Institute of Physics.