SHALLOW DONOR NEUTRALIZATION IN CDTE-IN BY ATOMIC-HYDROGEN

Passivation effects in In doped n-CdTe upon exposure to rf hydrogen pl asma are studied by electrical and photoluminescence measurements and were found to be maximum at about 150 degrees C. Depth profiling by ca pacitance-voltage measurements show passivation of approximately an or der of magnitude at 150 degrees C and 50% at 170 degrees C. No visual surface damage is seen. Reverse bias annealing experiments show that a tomic hydrogen drifts in a charged slate in n-CdTe, with reactivation kinetics of the donors different from the other well studied semicondu ctors. Manifestation of the donor passivation in photoluminescence is seen by the reduction of the donor bound luminescence. (C) 1996 Americ an Institute of Physics.