ELECTRON-EMISSION-ENHANCED DIAMOND NUCLEATION ON SI BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Authors
CHEN QJ LIN ZD
Citation
Qj. Chen et Zd. Lin, ELECTRON-EMISSION-ENHANCED DIAMOND NUCLEATION ON SI BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(17), 1996, pp. 2450-2452
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
17
Year of publication
1996
Pages
2450 - 2452
Database
ISI
SICI code
0003-6951(1996)68:17<2450:EDNOSB>2.0.ZU;2-7
Abstract
Diamond nucleation on mirror-polished Si was enhanced by electron emis sion using hot filament chemical vapor deposition. The nucleation dens ity was 10(8) cm(-2). The mechanism of diamond nucleation is carefully discussed. It is surmised that it is electron emission that is respon sible for the enhancement of the diamond nucleation in our experiments . (C) 1996 American Institute of Physics.