Z1-OSCILLATIONS IN THE STOPPING POWERS OF SILICON AND TUNGSTEN FOR LOW-VELOCITY CHANNELED HEAVY-IONS

Citation
Vh. Kumar et Ap. Pathak, Z1-OSCILLATIONS IN THE STOPPING POWERS OF SILICON AND TUNGSTEN FOR LOW-VELOCITY CHANNELED HEAVY-IONS, Journal of physics. Condensed matter, 5(19), 1993, pp. 3163-3168
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
5
Issue
19
Year of publication
1993
Pages
3163 - 3168
Database
ISI
SICI code
0953-8984(1993)5:19<3163:ZITSPO>2.0.ZU;2-M
Abstract
A model of stopping for low-velocity heavy ions moving through an elec tron gas incorporating a shell model charge density has been used to c alculate the stopping powers of silicon and tungsten for ions channell ed along silicon [110] and tungsten [100] single crystals. The energy loss of the heavy ions is attributed to the scattering of target elect rons in the potential field of a moving projectile. So the stopping cr oss section is proportional to the momentum transfer (or transport) cr oss section. A comparison of the results with experimental data and ea rlier theoretical calculation shows good agreement. The present model is most suited to projectile velocities greater than the Fermi velocit y of target electrons.