ELECTROCHEMICAL DEPOSITION OF PD, TI, AND GE FOR APPLICATIONS IN GAASTECHNOLOGY

Authors
SCHUSSLER M STATZNER T LIN CI KROZER V HORN J HARTNAGEL HL
Citation
M. Schussler et al., ELECTROCHEMICAL DEPOSITION OF PD, TI, AND GE FOR APPLICATIONS IN GAASTECHNOLOGY, Journal of the Electrochemical Society, 143(4), 1996, pp. 73-75
Citations number
6
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
143
Issue
4
Year of publication
1996
Pages
73 - 75
Database
ISI
SICI code
0013-4651(1996)143:4<73:EDOPTA>2.0.ZU;2-W
Abstract
The electrolytic deposition of Pd, Ti, and Ge is demonstrated. A proce ss for depositing smooth surfaces of layers from 10 to 100 nm and thic ker is described. Applications of this technology for Schottky and ohm ic contacts are shown and the advantages to similar evaporated metalli zation schemes are listed.