GAP FILL AND FILM REFLOW CAPABILITY OF SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITED BOROPHOSPHOSILICATE GLASS

Citation
S. Robles et al., GAP FILL AND FILM REFLOW CAPABILITY OF SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITED BOROPHOSPHOSILICATE GLASS, Journal of the Electrochemical Society, 143(4), 1996, pp. 1414-1421
Citations number
20
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
143
Issue
4
Year of publication
1996
Pages
1414 - 1421
Database
ISI
SICI code
0013-4651(1996)143:4<1414:GFAFRC>2.0.ZU;2-0
Abstract
This work presents a systematic process characterization of subatmosph eric chemical vapor deposited (SACVD) borophosphosilicate glass (BPSG) . The effects of deposition pressure, ozone concentration, ozone flow, and dopant concentration on the film reflow profile and film properti es are presented. Our results indicate that a decrease in the depositi on pressure from atmospheric conditions to 200 Torr provides more than a 200% increase in SACVD BPSG deposition rate without affecting film quality. Phosphorous is incorporated in the stable form of P2O5 at all deposition pressures. Higher ozone concentrations improve SACVD BPSG film reflow and film properties. Moreover, at higher dopant concentrat ions, both film shrinkage and stress-temperature hysteresis decrease.