S. Robles et al., GAP FILL AND FILM REFLOW CAPABILITY OF SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITED BOROPHOSPHOSILICATE GLASS, Journal of the Electrochemical Society, 143(4), 1996, pp. 1414-1421
This work presents a systematic process characterization of subatmosph
eric chemical vapor deposited (SACVD) borophosphosilicate glass (BPSG)
. The effects of deposition pressure, ozone concentration, ozone flow,
and dopant concentration on the film reflow profile and film properti
es are presented. Our results indicate that a decrease in the depositi
on pressure from atmospheric conditions to 200 Torr provides more than
a 200% increase in SACVD BPSG deposition rate without affecting film
quality. Phosphorous is incorporated in the stable form of P2O5 at all
deposition pressures. Higher ozone concentrations improve SACVD BPSG
film reflow and film properties. Moreover, at higher dopant concentrat
ions, both film shrinkage and stress-temperature hysteresis decrease.