CALCULATION AND ANALYSIS OF THE INTRINSIC CARRIER CONCENTRATION AND THE EINSTEIN RELATION FOR HEAVILY-DOPED SILICON FROM 77 K TO 300 K

Authors
XIAO ZX WEI TL JIANG Z
Citation
Zx. Xiao et al., CALCULATION AND ANALYSIS OF THE INTRINSIC CARRIER CONCENTRATION AND THE EINSTEIN RELATION FOR HEAVILY-DOPED SILICON FROM 77 K TO 300 K, JPN J A P 1, 35(3), 1996, pp. 1599-1604
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
3
Year of publication
1996
Pages
1599 - 1604
Database
ISI
SICI code
Abstract
On the basis of the Fermi integrals, the influence of the nondegenerat e approximation, the degenerate approximation and nonparabolic energy bands on the calculation of the intrinsic carrier concentration and th e Einstein relation has been analyzed for heavily doped silicon at low temperatures. The main results show that the degenerate approximation is appropriate up to the doping level of 10(20) cm(-3). At ultrahigh doping concentrations (>10(20) cm(-3)), it is necessary to adopt the n onparabolic energy band modilication.