GROWTH AND CHARACTERIZATION OF THICK GAN BY SUBLIMATION METHOD AND HOMOEPITAXIAL GROWTH BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Thick GaN, 10-30 mu m, was grown on sapphire substrate by a sublimatio n method for the first time. GaN was homoepitaxially grown on this thi ck layer by metalorganic chemical vapor deposition to obtain a high-qu ality layer. Stimulated emission from a photopumped homoepitaxial GaN grown on thick GaN prepared by the sublimation method at room temperat ure was demonstrated. The threshold of the stimulated emission was est imated to be 1.04 MW/cm(2).